DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
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DATA SHEET
MOS FIELD EFFECT
TRANSISTORS
2SK2361/2SK2362
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain)
FEATURES
Low On-Resistance
2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
1.0
15.7 MAX. 4
3.2±0.2
Low Ciss Ciss = 1050 pF TYP. High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 10 ± 40 100 3.0 150 10 142 V V A A W W ˚C
20.0±0.2 6.0 1 19 MIN. 3.0±0.2
2
3
2.2±0.2 5.45
MP-88
Drain
–55 to +150 ˚C A mJ
Gate
Body Diode
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No. TC-2502 (O. D. No. TC-8061) Date Published December 1994 P Printed in Japan
©
1995
2SK2361/2SK2362
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.7 0.8 Gate to Source Cutoff Voltage Forward Transfer Admittance ...