2SK2366

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) 4 1 2 3 Low Ciss Ciss = 1 600 pF TYP. High Avalanche Capability Ratings Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2365/2SK2366) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 10 ± 40 75 1.5 150 10 143 V V A A W W ˚C A mJ 6.0 MAX. 1.3 ± 0.2 0.75 ± 0.1 2.54 0.5 ± 0.2 2.8 ± 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4 1.0 ± 0.5 8.5 ± 0.2 1.5 MAX. 4.8 MAX. 1.3 ± 0.2 1.4 ± 0.2 –55 to +150 ˚C 1.0 ± 0.3 (2.54) (2.54) 1 2 3 1.1 ± 0.4 3.0 ± 0.5 R) ) .5 R (0 0.8 ( 0.5 ± 0.2 ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 2.8 ± 0.2 1. 2. 3. 4. Gate Drain Source Fin (Drain) MP-25Z (SURFACE MOUNT T...