2SK2373

2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st. Edition Application Low frequency power switching Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. Marking is “ZE–”. Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 0.2 0.4 0.2 150 150 –55 to +150 Unit V V A A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 ±20 — — 1.0 — — Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note 1. Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf — — — — — — — Typ — — — — — 1.4 1.0 17.8 25.4 3.7 50 125 660 400 Max — — ±2 1 2.0 2.5 1.4 — — — — — — — Unit V V µA µA V Ω Ω pF pF pF ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10 µA, VDS = 5 V I D = 20 mA VGS = 4 V*1 I D = 10 mA VGS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 0.1 A VGS = 10 V RL = 100 Ω ...