2SK2378

Ordering number : ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2063A [2SK2378] 10.0 3.2 4.5 2.8 Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitaing mounting. 3.5 7.2 16.0 18.1 14.0 1.6 1.2 0.75 5.6 2.4 0.7 2.55 1 2 3 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 200 ± 20 13 Unit V V A A W W °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 Conditions 52 2.0 30 150 -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 IG=± 100µA, VDS=0 VDS=200V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A 1.5 5 8.5 Ratings min 200 ± 20 100 ± 10 2.5 typ max Unit V V µA µA V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or ot...