2SK2410

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) Low Ciss Ciss = 1500 pF TYP. High Avalanche Capability Ratings Built-in G-S Gate Protection Diodes QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1 2.5 ±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) 60 ± 20 ± 30 ± 120 35 2.0 150 30 90 V V A A W W ˚C Gate Drain 1 2 3 1. Gate 2. Drain 3. Source MP-45F(ISOLATED TO-220) Total Power Dissipation (Tc = 25 ˚C) PT1 Total Power Dissipation (TA = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS EAS –55 to +150 ˚C A mJ Body Diode Gate Protection Diode Source ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information in this documen...