DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTIO...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters)
+ 0.2 1.5 – 0.1
6.5 ± 0.2
2.3 ± 0.2 0.5 ± 0.1
FEATURES
1.6 ± 0.2
5.0 ± 0.2 4
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
1 2 3
Low Ciss
Ciss = 570 pF TYP.
1.3 MAX.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2.3 2.3
7.0 MAX. 5.5 ± 0.2 13.7 MIN.
Low On-Resistance
0.6 ± 0.1
0.6 ± 0.1
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-251 (MP-3)
6.5 ± 0.2
5.0 ± 0.2
+ 0.2 1.5 – 0.1
0.75
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ± 8.0 ±32 20 1.0 150 8.0 6.4 V
0.8 4.3 MAX.
2.3 ± 0.2 0.5 ± 0.1
A A W W °C A mJ
12.0
MIN.
1.3 MAX.
0.9
MAX.
0.8
MAX.
2.3 2.3
0.8
–55 to +150 °C
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-252 (...