2SK242

Ordering number:EN695G N-Channel Junction Silicon FET 2SK242 Low-Frequency General-Purpose Amplifier Applications Features · Ultrasmall-sized package permitting 2SK242-applied sets to be made small and slim. · Small Crss (Crss=0.04pF typ). Package Dimensions unit:mm 2024B [2SK242] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDO IGSS IDSS* VGS(off) | yfs |1 | yfs |2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss * : The 2SK242 is classified by IDSS as follows : (unit : mA). IG=–10µA VGS=–0.5V, VDS=0 VDS=5V, VGS=0 VDS=5V, ID=10µA VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=100MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz 0.6 2 1.5 1.2 3 3.0 2.5 4 6.0 5.0 5 12.0 0.8 1.1 1 : Gate 2 : Drain 3 : Source SANYO : CP Ratings –20 10 20 150 125 –55 to +125 Unit V mA mA mW ˚C ˚C Ratings min typ max Unit –20 V –10 nA 0.6* 12.0* mA –2.5 V 2.0 6.0 mS 2.0 6.0 mS 4.0 pF 4.0 pF 0.04 0.15 pF Continued on next page. Any and all SANYO products described or contain...