2SK2440

Ordering number:ENN5094 N-Channel Silicon MOSFET 2SK2440 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2116 [2SK2440] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2× 0.8mm) Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=16V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=4V ID=2A, VGS=2.5V 1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Ratings 20 ±10 6 48 2.0 150 –55 to +150 Unit V V A A W ˚C ˚C Ratings min typ max Unit 20 V 100 µA ±10 µA 0.4 1.4 V 10 14 S 30 38 mΩ 40 58 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, airc...