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2SK2479 Dataheets PDF



Part Number 2SK2479
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2479 Datasheet2SK2479 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2479 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX. • Low Ciss Ciss = 485 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2479 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX. • Low Ciss Ciss = 485 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 3.0 ± 8.0 70 1.5 150 3.0 5.4 V V A A W W ˚C A mJ 4 1 2 3 1.3 ± 0.2 0.75 ± 0.1 2.54 0.5 ± 0.2 2.8 ± 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Drain –55 to +150 ˚C Body Diode Gate ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Source Document No. D10271EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2479 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 485 75 10 12 5 35 8 17 3 8 1.0 670 3.0 2.5 0.8 100 ± 100 MIN. TYP. 5.6 MAX. 7.5 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 10 Ω ID = 3.0 A VDD = 450 V VGS = 10 V IF = 3.0 A, VGS = 0 IF = 3.0 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID D Wave Form BVDSS IAS ID VDD VDS VGS 0 t t = 1us Duty Cycle ≤ 1 % I 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2479 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10 FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A 10 1 R ( DS on ) Lim it ed V (at GS = 10 V) ID(pulse) 1 PW = 10 0 ID - Drain Current - A ID(DC) Po w er Di 10 ss ipa m s s 5 m tio s Lim VGS = 20 V 10 V 8V 6V µ n 0.1 TC = 25 ˚C Single Pulse 1 10 100 ite d 1000 0 10 20 30 40 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C Pulsed VDS = 10 V ID - Drain Current - A 10 1.0 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2479 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 000 rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 83.3(˚C/W) 100 10 Rth(ch-c) = 1.79(˚C/W) 1.0 0.1 0.01 10 µ Single Pulse Tc = 25 ˚C 100 µ 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C VDS = 20 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed RDS(on) - Drain to Source On-State Resistance - Ω 1.0 10 ID = 3A 1.5 A 0.6 A 0.1 5 1 1 0.1 1.0 10 0 10 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 VGS(off) - Gate to Source Cutoff Voltage - V Pulsed VGS = 10 V VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA RDS(on) - Drain to Source On-State Resistance - Ω 10 5 5 0 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C 0.1 1.0 ID - Drain Current - A 10 4 2SK2479 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Forward Current - A RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 10 10 V.


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