Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2479
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2479 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 ± 0.2
FEATURES
• Low On-Resistance
RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A)
6.0 MAX.
• Low Ciss Ciss = 485 pF TYP. • High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 3.0 ± 8.0 70 1.5 150 3.0 5.4 V V A A W W ˚C A mJ
4 1 2 3 1.3 ± 0.2 0.75 ± 0.1 2.54
0.5 ± 0.2 2.8 ± 0.2
2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
Drain
–55 to +150 ˚C
Body Diode Gate
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No. D10271EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan
©
1995
2SK2479
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 485 75 10 12 5 35 8 17 3 8 1.0 670 3.0 2.5 0.8 100 ± 100 MIN. TYP. 5.6 MAX. 7.5 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 10 Ω ID = 3.0 A VDD = 450 V VGS = 10 V IF = 3.0 A, VGS = 0 IF = 3.0 A, VGS = 0 di/dt = 50 A/µs
µA
nA pF pF pF ns ns ns ns nC nC nC V ns
µC
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω
Test Circuit 2 Switching Time
D.U.T.
L VDD PG. RG RG = 10 Ω
RL
VGS
Wave Form
VGS
0 10 % VGS (on) 90 %
VDD
ID
90 % 90 % ID
D Wave Form
BVDSS IAS ID VDD VDS
VGS 0 t t = 1us Duty Cycle ≤ 1 %
I
0
10 % td (on) ton tr td (off) toff
10 % tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2479
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
0
20
40
60
80
100 120 140 160
TC - Case Temperature - ˚C
TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10
FORWARD BIAS SAFE OPERATING AREA 100
ID - Drain Current - A
10
1
R
( DS
on
)
Lim
it
ed
V (at
GS
=
10
V)
ID(pulse)
1
PW
=
10
0
ID - Drain Current - A
ID(DC)
Po w er Di
10
ss ipa
m
s
s
5
m
tio
s
Lim
VGS = 20 V 10 V 8V 6V
µ
n
0.1
TC = 25 ˚C Single Pulse 1 10 100
ite
d
1000
0
10
20
30
40
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C Pulsed VDS = 10 V
ID - Drain Current - A
10
1.0
0.1
0
5
10
15
VGS - Gate to Source Voltage - V
3
2SK2479
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 000 rth(t) - Transient Thermal Resistance - ˚C/W
1 000 Rth(ch-a) = 83.3(˚C/W)
100
10 Rth(ch-c) = 1.79(˚C/W) 1.0
0.1 0.01 10 µ Single Pulse Tc = 25 ˚C 100 µ 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C VDS = 20 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed
RDS(on) - Drain to Source On-State Resistance - Ω
1.0
10
ID =
3A 1.5 A 0.6 A
0.1
5
1 1
0.1
1.0
10
0
10
20
30
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 VGS(off) - Gate to Source Cutoff Voltage - V Pulsed VGS = 10 V
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA
RDS(on) - Drain to Source On-State Resistance - Ω
10
5
5
0
0 –50 0 50 100 150 Tch - Channel Temperature - ˚C
0.1
1.0 ID - Drain Current - A
10
4
2SK2479
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Forward Current - A
RDS(on) - Drain to Source On-State Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
100
10
10 V.