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2SK2480 Dataheets PDF



Part Number 2SK2480
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2480 Datasheet2SK2480 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3 • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3 • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 3.0 ± 12 35 2.0 150 3.0 37.1 V V A A W W ˚C A mJ 1 2 3 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. 12.0±0.2 • Low Ciss Ciss = 900 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 MP-45F (ISOLATED TO-220) Drain Body Diode Gate Source Document No. D10272EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2480 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on) VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 900 130 25 17 7 63 8 30 5 16 1.0 650 2.8 2.5 1.0 100 ± 100 MIN. TYP. 3.2 MAX. 4.0 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 75 Ω ID = 3.0 A VDD = 450 V VGS = 10 V IF = 3.0 A, VGS = 0 IF = 3.0 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID D Wave Form BVDSS IAS ID VDD VDS VGS 0 t t = 1us Duty Cycle ≤ 1 % I 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2480 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10 FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A 10 d( a tV GS = 1 ) 0V 10 ID - Drain Current - A P ID(pulse) W = 0 µs 1 R DS (o Lim n) ite ID(DC) Po w 10 1 m m s 5 VGS = 20 V 10 V 8V 6V er Di ss 10 0 s ip m at io s n 0.1 TC = 25 ˚C Single Pulse 1 10 Li m ite d 100 1000 0 10 20 30 40 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C Pulsed VDS = 10 V ID - Drain Current - A 10 1.0 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2480 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-a) = 62.5(˚C/W) 10 Rth(ch-c) = 3.57(˚C/W) 1 0.1 0.01 0.001 10 µ Single Pulse Tc = 25 ˚C 100 µ 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS = 20 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed RDS(on) - Drain to Source On-State Resistance - Ω 10 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 10 5 ID = 3A 1.5 A 0.6 A 0.1 0.01 0.1 1.0 10 0 10 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 8 7 6 5 4 3 2 1 0 1.0 10 ID - Drain Current - A 100 Pulsed VGS = 10 V VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA RDS(on) - Drain to Source On-State Resistance - Ω 5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C 4 2SK2480 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed RDS(on) - Drain to Source On-State Resistance - Ω 10.


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