2SK2481

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 ± 0.2 FEATURES Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX. Low Ciss Ciss = 900 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 4.0 ± 12 70 1.5 150 4.0 65.9 V V A A W W ˚C A mJ 4 1 2 3 1.3 ± 0.2 0.75 ± 0.1 2.54 0.5 ± 0.2 2.8 ± 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Drain –55 to +150 ˚C Body Diode Gate ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Source Document No. D10273EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2481 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance...