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2SK2482 Dataheets PDF



Part Number 2SK2482
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2482 Datasheet2SK2482 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 FEATURES • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A) 1.0 15.7 MAX. 4 3.2±0.2 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* T.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 FEATURES • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A) 1.0 15.7 MAX. 4 3.2±0.2 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 5.0 ± 12 100 3.0 150 5.0 73.5 V V A A W W ˚C A mJ 19 MIN. 3.0±0.2 2.2±0.2 5.45 1.0±0.2 5.45 4.5±0.2 • Low Ciss Ciss = 900 pF TYP. • High Avalanche Capability Ratings 20.0±0.2 6.0 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 Drain –55 to +150 ˚C ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Gate Body Diode Source Document No. D10274EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 7.0 1995 2SK2482 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on) VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 900 130 25 17 8 60 10 30 5 13 1.0 780 4.2 2.5 1.0 100 ± 100 MIN. TYP. 3.2 MAX. 4.0 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 3.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 3.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 3.0 A VGS = 10 V VDD = 150 V RG = 10 Ω ID = 5.0 A VDD = 450 V VGS = 10 V IF = 5.0 A, VGS = 0 IF = 5.0 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID BVDSS IAS ID VDD VDS VGS 0 t t = 1 us Duty Cycle ≤ 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2482 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 80 60 40 20 120 100 80 60 40 .


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