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2SK2483 Dataheets PDF



Part Number 2SK2483
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2483 Datasheet2SK2483 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2483 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2483 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % G VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS = 25 Ω, VGS = 20 V → 0 ± 30 ± 3.5 ± 10.5 40 2.0 150 3.5 147 V A A W W ˚C A mJ 1 2 3 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. VDSS 900 V 12.0±0.2 • Low Ciss Ciss = 1 200 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C ** Starting Tch = 25 ˚C, R MP-45F (ISOLATED TO-220) Drain Body Diode Gate Source Document No. D10275EJ1V0DS00 (1st edition) Date Published September 1995 P Printed in Japan © 1995 2SK2483 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on) VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1 200 170 30 20 10 70 15 40 7 17 0.9 580 3.0 2.5 1.0 100 ± 100 MIN. TYP. MAX. 2.8 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 75 Ω ID = 3.5 A VDD = 450 V VGS = 10 V IF = 3.5 A, VGS = 0 IF = 3.5 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID D Wave Form BVDSS IAS ID VDD VDS VGS 0 t t = 1us Duty Cycle ≤ 1 % I 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2483 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 1.


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