2SK2512

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 Low Ciss Ciss = 2 100 pF TYP. Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature * PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg ± 20 ± 45 ± 180 35 2.0 150 V A A W W ˚C 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. VDSS 60 V 12.0±0.2 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C MP-45F (ISOLATED TO-220) Drain Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Gate Protection Diode Source Document No. D10291EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2512 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source ...