2SK2514

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) Super Low On-Resistance RDS (on)1 ≤ 15 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 23 mΩ (VGS = 4 V, ID = 25 A) 1.0 FEATURES 15.7 MAX. 4 3.2±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg 60 ± 20 ± 50 ± 200 150 3.0 150 V V A A W W ˚C 19 MIN. 3.0±0.2 Low Ciss Ciss = 2 100 pF TYP. Built-in G-S Protection Diode 20.0±0.2 6.0 1 2 3 2.2±0.2 5.45 MP-88 Drain –55 to +150 ˚C Body Diode Gate Gate Protection Diode Source Document No. D10296EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2514 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time F...