2SK2533

Ordering number : EN8611 2SK2533 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2533 General-Purpose Switching Device Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) ⏐yfs⏐ ID=1mA, VGS=0V IG= ±100μA, VDS=0V VDS=250V, VGS=0V VGS= ±25V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A Ratings 250 ±30 12 48 45 150 --55 to +150 Unit V V A A W °C °C min 250 ±30 2.0 6.0 Ratings typ max Unit V V 1.0 mA ±10 μA 3.0 V 10 S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products ment...