2SK2538

Power F-MOS FETs 2SK2538 2SK2538 Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 0.7±0.1 energy capability guaranteed switching 16.7±0.3 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 q High-speed q No secondary breakdown 7.5±0.2 ø3.1±0.1 s Applications q High-speed q For switching (switching mode regulator) 4.0 high-frequency power amplification 14.0±0.5 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 -0.1 s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 250 ±30 ±2 ±4 10 30 2 150 –55 to +150 Unit V V A A mJ W ˚C ˚C 2.54±0.25 5.08±0.5 1 2 3 Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature * L= 5mH, IL= 2A, VDD= 30V, 1 pulse 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD= 200V, ID= 2A VGS=10V, R L=100Ω VDS=10V, VGS= 0, f=1MHz ...