2SK2539

Ordering number:ENN5075 N-Channel Junction Silicon FET 2SK2539 High-Frequency Amplifier, Analog Switch Applications Features · Large | yfs |. · Small Ciss. · Small-sized package permitting 2SK2539-applied sets to be made small and slim. · Adoption of FBET process. Package Dimensions unit:mm 2050A [2SK2539] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–10V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=5V, VGS=0 Cutoff Voltage VGS(off) VDS=5V, ID=10µA Forward Transfer Admittance | yfs |1 | yfs |2 VDS=5V, ID=10mA, f=1kHz VDS=5V, VGS=0, f=1kHz * : The 2SK2539 is classified by IDSS as follows : (unit : mA) 10.0 6 20.0 16.0 7 32.0 25.0 8 50.0 Marking : AK IDSS rank : 6, 7, 8 0.8 1.1 0.5 1 : Source 2 : Drain 3 : Gate SANYO : CP Ratings 15 –15 5 50 200 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ max Unit –15 V –1.0 nA 10.0* 50.0* mA –0.6 –1.4 –3.0 V 14 21 mS 14 29 mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that ...