N-Channel MOSFET
2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-357H (Z) 9th. Edition February 1999...
Description
2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-357H (Z) 9th. Edition February 1999 Application
High speed power switching
Features
Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK2553(L), 2SK2553(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note 1
Ratings 60 ±20 50 200 50 45 174 75 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR Pch Tch
Tstg
2
2SK2553(L), 2SK2553(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 35 — — — — — — — — — Typ — — — — — 7 10 55 3550 1760 500 35 2...
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