2SK2569

2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st. Edition Application Low frequency power switching Features Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2569 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 50 ±20 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 50 ±20 — — 0.5 — — 0.13 — — — — — — — Typ — — — — — 2.0 3.1 0.23 14.0 17.2 1.73 40 86 1120 430 Max — — 1.0 ±2.0 1.5 2.6 5.0 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 40 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = 10 µA, VDS = 5 V I D = 100 mA VGS = 4 V*1 I D = 40 mA VGS = 2.5 V*1 I D = 100 mA VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 100 mA RL = 300 Ω Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Foward transfer admittance Input capacitance Output capacitance Reverse transfer capacitan...