2SK2573

Power F-MOS FETs 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown 4.5 unit: mm 15.5±0.5 φ3.2±0.1 10.0 3.0±0.3 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 3.3±0.3 0.7±0.1 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±20 ±40 20 100 3 150 −55 to +150 Unit V V A A mJ W °C °C 5˚ 5.5±0.3 s Absolute Maximum Ratings (TC = 25°C) 5.45±0.3 5.45±0.3 1 2 3 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 0.1mH, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 400V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 10A VDS = 25V, ID = 10A IDR = 20A, VGS = 0 3000 VDS = 20V, VGS = 0, f = 1MHz 430 1...