2SK2597

PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) Low intermodulation distortion Covers all base station frequencies such as 800-MHz PDC and GSM High-reliability gold electrodes Hermetic sealed package Internal matching circuit Push-pull structure PACKAGE DRAWING (Unit: mm) 45˚ G1 S G2 45˚ φ 3.3±0.3 11.4±0.3 19.4±0.4 D1 D2 1.4 3.2±0.2 ±0.3 3.2±0.2 13.5±0.3 28.0±0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current (D.C.) Total power dissipation Thermal resistance Channel temperature Storage temperature Symbol VDS VGS ID PT Rth Tch Tstg Ratings 60 7 15Note 290 0.6 200 –65 to +150 Unit V 0.1 2.5±0.2 V A W ˚C/W ˚C ˚C 21.5±0.3 Note Per side G1, G2: gate D1, D2: drain S : source Flange is connected to the source. ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Parameter Gate leakage current Cut-off voltage Drain current Mutual conductance Output power Drain efficiency Linear gain Symbol IGSS VGS(off) IDSS gm PO VGS = 7 V VDS = 5 V, ID = 50 mA VDS = 60 V VDS = 5 V, ID = 3 A, ∆ID = 100 mA f = 960 MHz, VDD = 30 V IDQ = 200 mA × 2, Pin = 40 dBm f = 960 MHz, VDD = 30 V IDQ = 200 mA × 2, Pin = 30 dBm f = 900 MHz, ∆f = 0.1 MHz, VDD = 30 V IDQ = 200 mA × 2, PO = 42 dBm 2.0 80 35 11...