2SK2646-01

2SK2646-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 4Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified > Equivalent Circuit Rating 800 4 16 ±30 4 254 80 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg - Electrical Characteristics (TC=25°C), Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance unless otherwise specified Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=800V Tch =25°C V...