Document
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2673
( FP5W90HVX2 )
900V 5A
FEATURES
●Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case : ITO-3P (Unit : mm)
Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION
●Switching power supply of AC 240V input ●High voltage power supply ●Inverter
RATINGS
●Absolute Maximum Ratings (Tc = 25℃) Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain Current(DC) ID IDP Continuous Drain Current(Peak) IS Continuous Source Current(DC) PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55~150 150 900 ±30 5 10 5 50 5 100 10 2 0.8 Unit ℃ V
Pulse width≦10μs, Duty cycle≦1/100
A W A mJ kV N・m
Tch = 150℃ Tch = 25℃ Tch = 25℃ Terminals to case, AC 1 minute ( Recommended torque :0.5 N・m )
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Static Drain-Source On-state Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2673 ( FP5W90HVX2 )
Min. 900 Typ. Max. 250 ±0.1 2.4 2.5 4.0 2.1 3.0 2.8 3.5 1.5 2.5 Unit V μA S Ω V ℃/W nC pF 100 350 ns
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1MHZ ID = 2.5A, RL = 60Ω, VGS = 10V
45 1140 23 105 55 210
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2673
10 Tc = − 55 °C
Transfer Characteristics
25 °C 8
Drain Current ID [A]
6
100 °C 150 °C
4
2 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2673
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
10
ID = 2.5A
1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2673
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
2SK2673
10
Safe Operating Area
100 µs 200 µs 1
Drain Current ID [A]
R DS(ON) limit
1ms
10ms 0.1 DC
Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2673
Transient Thermal Impedance
10
1
Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2673
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%].