N-Channel Silicon MOSFET
Ordering number : ENN6783A
2SK2682LS
N-Channel Silicon MOSFET
2SK2682LS
Ultrahigh-Speed Switching Applications
Feature...
Description
Ordering number : ENN6783A
2SK2682LS
N-Channel Silicon MOSFET
2SK2682LS
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2078C
[2SK2682LS]
10.0 3.2
3.5 7.2
Low ON-resistance. High-speed diode. Micaless package facilitating mounting.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 250 ±30 13 52 2 35 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 IG=±100µA, VGS=0 VDS=250V, VGS=0 VGS=±25V, VDS=0 VDS=10V, ID=1mA Ratings min 250 ±30 1.0 ±10 2.0 3.0 typ max Unit V V mA µA V
0.6
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical a...
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