Part Number |
2SK2682LS |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
N-Channel Silicon MOSFET |
Datasheet |
2SK2682LS Datasheet (PDF) |
Ordering number : ENN6783A
2SK2682LS
N-Channel Silicon MOSFET
2SK2682LS
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2078C
[2SK2682LS]
10.0 3.2
3.5 7.2
Low ON-resistance. High-speed diode. Micaless package facilitating mounting.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 250 ±30 13 52 2 35 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off.