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Part Number 2SK2682LS
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK2682LS Datasheet2SK2682LS Datasheet (PDF)

  2SK2682LS   2SK2682LS
Ordering number : ENN6783A 2SK2682LS N-Channel Silicon MOSFET 2SK2682LS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2078C [2SK2682LS] 10.0 3.2 3.5 7.2 Low ON-resistance. High-speed diode. Micaless package facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings 250 ±30 13 52 2 35 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off.



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