Part Number |
2SK2684L |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N Channel DV-L MOS FET |
Datasheet |
2SK2684L Datasheet (PDF) |
2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET High Speed Power Switching
ADE-208-542 1st. Edition Features
• Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2684(L), 2SK2684(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±20 30 120 30 50 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2684(L), 2SK2684(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±20 — — 1.0 — .