2SK2684L

2SK2684(L), 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 30 120 30 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2684(L), 2SK2684(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±20 — — 1.0 — — 12 — — — — — — — — — Typ — — — — — 20 35 18 750 520 210 16 260 85 90 1.0 45 Max — — 10 ±10 2.0 28 50 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 30A, VGS = 0 I F = 30A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10V*1 I D = 15A, VGS = 4V*1 I D = 15A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 15A RL = 0.67Ω Gate to source cutoff vol...