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2SK2690-01 Dataheets PDF



Part Number 2SK2690-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet 2SK2690-01 Datasheet2SK2690-01 Datasheet (PDF)

2SK2690-01 FAP-IIIB Series FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source.

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2SK2690-01 FAP-IIIB Series FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range Symbol VDS ID ID p VGS EAV *1 PD Tch Tstg Ratings 60 ±80 ±320 ±20 599 125 +150 -55 to +150 Unit V A A V mJ W °C °C *1 L=0.125mH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Symbol BVDSS VGS(th) IDSS IGSS RDS(on) Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID= 1mA VGS=0V ID= 1mA VDS=VGS VDS=60V VGS=0V VGS=±20V VDS=0V ID=40A ID=40A VDS=25V VDS=25V VGS=0V f=1MHz Tch=25°C Tch=125°C VGS=4V VGS=10V VCC=30V ID=75A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=160A VGS=0V Tch=25°C IF=80A VGS=0V -di/dt=100A/µs Tch=25°C Drain(D) Gate(G) Source(S) Min. Typ. Max. Units 60 V 1.0 1.5 2.0 V 10 500 0.2 1.0 µA mA 10 100 nA 12 17 mΩ 7.5 10 25.0 55.0 S 3500 5250 pF 1250 1870 360 540 15 23 ns 75 120 190 285 110 165 80 A 1.15 75 0.17 1.65 120 V ns µC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.00 35.0 Units °C/W °C/W 1 2SK2690-01 Characteristics FUJI POWER MOSFET 2 2SK2690-01 FUJI POWER MOSFET 3 2SK2690-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ 4 .


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