2SK2690-01
FAP-IIIB Series
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-3P
Features
High speed switching Low on-resistance No secondary breadown Low driving power
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range
Symbol
VDS
ID
ID p
VGS
EAV
*1
PD
Tch
Tstg
Ratings 60
±80 ±320
±20 599 125 +150 -55 to +150
Unit V A A V mJ W °C °C
*1 L=0.125mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Symbol BVDSS VGS(th) IDSS
IGSS.