2SK2691-01R FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
Applications Switching regulators DC-DC converters General purpose power amplifier
Outline Drawings
TO-3PF
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range
Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg
Rating 60
Unit V
Remarks
±70 A
±280
A
±20 V
685 mJ *1
100 W
+150 -55 to +150
°C °C
*1 L=0.186mH, Vcc=24V
Equivalent circuit schematic
Drain(D) Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current D.