2SK2691-01R FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features High speed switching Low on-res...
2SK2691-01R FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
Applications Switching
regulators DC-DC converters General purpose power amplifier
Outline Drawings
TO-3PF
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range
Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg
Rating 60
Unit V
Remarks
±70 A
±280
A
±20 V
685 mJ *1
100 W
+150 -55 to +150
°C °C
*1 L=0.186mH, Vcc=24V
Equivalent circuit schematic
Drain(D) Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time
Turn-off time
Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Symbol V(BR)DSS VGS(th) IDSS
IGSS RDS(on)
gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr
Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V
VGS=20V VDS=0V ID=40A VGS=10V
ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V RG=10 Ω ID=75A VGS=10V
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