Part Number |
2SK2698 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2698 Datasheet (PDF) |
2SK2698
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2698
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.35 Ω (typ.) : |Yfs| = 11 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 150 630 15 15 150 −55~150 Unit V V V A A W 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC
mJ A mJ °C °C
― ― 2-16C1B
JEITA TOSHIBA
Weight: 4.6 g (typ.)
Note: Using continuously unde.