Part Number |
2SK2699 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2699 Datasheet (PDF) |
2SK2699
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2699
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.)
z High forward transfer admittance : |Yfs| = 11 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
600
V
600
V
±30
V
12
A
48
A
150
W
605
mJ
12
A
15
mJ
150
°C
−55 to 150
°C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16.