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Part Number 2SK2699
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2699 Datasheet2SK2699 Datasheet (PDF)

  2SK2699   2SK2699
2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2699 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 12 A 48 A 150 W 605 mJ 12 A 15 mJ 150 °C −55 to 150 °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16.



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