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Part Number 2SK2718
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOS Type Field Effect Transistor
Datasheet 2SK2718 Datasheet2SK2718 Datasheet (PDF)

  2SK2718   2SK2718
2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 2.5 7.5 40 216 2.5 4.0 www.DataSheet.co.kr Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B 150 −55~150 Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the a.



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