Part Number |
2SK2718 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOS Type Field Effect Transistor |
Datasheet |
2SK2718 Datasheet (PDF) |
2SK2718
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2718
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 2.5 7.5 40 216 2.5 4.0
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Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
150 −55~150
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the a.