DatasheetsPDF.com



Part Number 2SK2719
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOS Type Field Effect Transistor
Datasheet 2SK2719 Datasheet2SK2719 Datasheet (PDF)

  2SK2719   2SK2719
2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS DGR Rating 900 900 ±30 3 Unit V V V 1. Gate 2. Drain (heat sink) 3. Source VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tstg A 9 125 295 3 12.5 150 −55 to 150 W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 4.6 g (typ.) Note: Using contin.



2SK2718 2SK2719 2SK2723


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)