Part Number |
2SK2719 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOS Type Field Effect Transistor |
Datasheet |
2SK2719 Datasheet (PDF) |
2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS
DGR
Rating 900 900 ±30 3
Unit V V V
1. Gate 2. Drain (heat sink) 3. Source
VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tstg
A 9 125 295 3 12.5 150 −55 to 150 W mJ A mJ °C °C
JEDEC JEITA TOSHIBA
― SC-65 2-16C1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range
Weight: 4.6 g (typ.)
Note: Using contin.