Part Number |
2SK2723 |
Manufacturers |
NEC |
Logo |
|
Description |
SWITCHING N-CHANNEL POWER MOS FET |
Datasheet |
2SK2723 Datasheet (PDF) |
DATA SHEET
MOS Field Effect Power Transistors
2SK2723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeter)
10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.
15.0 ± 0.3
3 ± 0.1 4 ± 0.2
• Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package
0.7 ± 0.1 2.54
1.3 ± 0.2 1.5 ± 0.2 2.54
13.5MIN.
12.0 ± 0.2
FEATURES
2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source
1 2 3
MP-45F (ISOLATED TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Temperature Storage Temperature *PW ≤ 10 µs, Duty Cycle ≤ 1% The diode connected between the gate and source.