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Part Number 2SK2726
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2726 Datasheet2SK2726 Datasheet (PDF)

  2SK2726   2SK2726
2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2726 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 7 28 7 7 2.7 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2726 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DS.



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