2SK2729

2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 20 80 20 20 22 150 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2729 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 — — 2.5 — 9 — — — — — — — — — — — — Typ — — — — — 0.24 15 3300 900 120 55 14 17 45 140 150 85 1.0 400 Max — — ±10 10 3.5 0.29 — — — — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF nc nc nc ns ns ns ns V ns I D = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt = 100A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 10A, VGS = 10V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 20A VGS = 10V, ...