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Part Number 2SK2730
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2730 Datasheet2SK2730 Datasheet (PDF)

  2SK2730   2SK2730
2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A (Z) 2nd. Edition September 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2730 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 25 100 25 25 35 175 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2730 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS.



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