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2SK2730 Dataheets PDF



Part Number 2SK2730
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2730 Datasheet2SK2730 Datasheet (PDF)

2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A (Z) 2nd. Edition September 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2730 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Cha.

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2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A (Z) 2nd. Edition September 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2730 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 25 100 25 25 35 175 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2730 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 — — 2.5 — 12 — — — — — — — — — — — — Typ — — — — — 0.2 20 3500 1000 150 65 16 24 50 140 200 110 1.1 450 Max — — ±10 10 3.5 0.24 — — — — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF nc nc nc ns ns ns ns V ns I D = 25A, VGS = 0 I F = 25A, VGS = 0 diF/ dt = 100A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 15A, VGS = 10V*1 I D = 15A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 25A VGS = 10V, ID = 15A RL = 2Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 2SK2730 Main Characteristics Power vs. Temperature Derating 200 Pch (W) I D (A) Maximum Safe Operation Area 500 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 150 PW DC Op er = Channel Dissipation Drain Current 10 m 100 at s( µ 1m s s 10 0µ s 1s ho t) 10 ion 50 Operation in this area is limited by R DS(on) Ta = 25 °C 1 (T c= 25 °C ) 0 50 100 150 Tc (°C) 200 Case Temperature 30 3 10 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 10 V I D (A) 40 8V 6.5 V 6V 30 (A) 40 Pulse Test 50 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current 30 25°C Tc = 75°C –25°C Drain Current 20 5.5 V 5V VGS = 4.5 V 20 10 10 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 4 2SK2730 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 10 Static Drain to Source on State Resistance vs. Drain Current 2 Pulse Test 1 8 I D = 25 A 20 A 4 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 6 0.5 VGS = 10 V 2 0.2 15 V 0.1 1 2 5 10 20 50 Drain Current I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 20 A I D = 25 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 2 0.5 1 5 10 20 Drain Current I D (A) 50 75 °C Tc = –25 °C 25 °C 0.6 0.4 V GS = 10 V 0.2 0 –40 5A 10 A 0 40 80 120 160 Case Temperature Tc (°C) 5 2SK2730 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 10000 5000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 2000 1000 500 200 100 50 20 10 5 Coss 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) VGS = 0 f = 1 MHz 0 10 20 30 Crss 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 500 VDS VGS V DD = 100 V 250 V 400 V ID = 25 A V DD = 400 V 250 V 100 V 40 80 120 160 Gate Charge Qg (nc) 20 1000 500 Switching Time t (ns) Switching Characteristics 400 16 t d(off) 200 tf 100 50 20 10 0.1 tr t d(on) Drain to Source Voltage 300 12 200 8 100 4 0 200 Gate to Source Voltage V GS = 10 V, V DD = 30 V PW = 10 µs, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 0 6 2SK2730 Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) 50 Reverse Drain Current I DR (A) 50 I AP = 25 A V DD = 50 V duty < 0.1 % Rg > 50 Ω Maximun Avalanche Energy vs. Channel Temperature Derating 40 40 30 5, 10 V 20 V GS = 0 V 30 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalize.


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