Part Number |
2SK2730 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2730 Datasheet (PDF) |
2SK2730
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-493 A (Z) 2nd. Edition September 1997 Features
• • • • Low on-resistance High speed switching Low drive current Avalanche ratings
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK2730
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 500 ±30 25 100 25 25 35 175 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
Pch* Tch Tstg
2
2SK2730
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS.