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Part Number 2SK2734
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2734 Datasheet2SK2734 Datasheet (PDF)

  2SK2734   2SK2734
2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 1st. Edition Features • Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 1 Ratings 30 ±20 5 20 5 0.9 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Pch Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse.



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