Part Number |
2SK2734 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2734 Datasheet (PDF) |
2SK2734
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-520 1st. Edition Features
• Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A
Outline
TO-92MOD.
D
G
3 S
2
1
1. Source 2. Drain 3. Gate
2SK2734
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)*
1
Ratings 30 ±20 5 20 5 0.9 150 –55 to +150
Unit V V A A A W °C °C
Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Pch Tch Tstg
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse.