Document
2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-543 1st. Edition Features
• Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±20 20 80 20 20 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2735(L), 2SK2735(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 20 35 16 750 520 210 16 225 85 90 1.0 40 Max — — ±10 10 2.0 28 50 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 20A, VGS = 0 diF/ dt = 50A/µs I F = 20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 10V*1 I D = 10A, VGS = 4V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz I D = 10A, VGS = 10V RL = 1Ω
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr
See characteristics curves of 2SK2684
3
2SK2735(L), 2SK2735(S)
Main Characteristics
Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area
500 200 100 50 20 10 5 2
30
10 µs
0
s
ot
Channel Dissipation
Drain Current
PW
C D
10
=
1
10 m s
20
m
(1
µs
10
0
50
100
150 Tc (°C)
200
Case Temperature
1 Ta = 25 °C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V)
)
Operation in this area is limited by R DS(on)
n tio ra pe O
sh
)
(T c = 25
°C
Dynamic Input Characteristics V DS (V) I D = 20 A VDD = 5 V 10 V 25 V V GS 20 8 V GS (V) Gate to Source Voltage 50 20
40
16
Drain to Source Voltage
30
V DS
12
10
V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc)
4 0 40
0
4
2SK2735(L), 2SK2735(S)
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5
0.2
0.1 0.05
0.02
0.0 1
0.3
0.1
θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C
P ot uls e
PDM PW T
D=
0.03
1s
h
PW T
0.01 10 µ
100 µ
1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin .