DatasheetsPDF.com

2SK2735S Dataheets PDF



Part Number 2SK2735S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Datasheet 2SK2735S Datasheet2SK2735S Datasheet (PDF)

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel.

  2SK2735S   2SK2735S



Document
2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 20 80 20 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2735(L), 2SK2735(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 20 35 16 750 520 210 16 225 85 90 1.0 40 Max — — ±10 10 2.0 28 50 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 20A, VGS = 0 diF/ dt = 50A/µs I F = 20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 10V*1 I D = 10A, VGS = 4V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz I D = 10A, VGS = 10V RL = 1Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr See characteristics curves of 2SK2684 3 2SK2735(L), 2SK2735(S) Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area 500 200 100 50 20 10 5 2 30 10 µs 0 s ot Channel Dissipation Drain Current PW C D 10 = 1 10 m s 20 m (1 µs 10 0 50 100 150 Tc (°C) 200 Case Temperature 1 Ta = 25 °C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) ) Operation in this area is limited by R DS(on) n tio ra pe O sh ) (T c = 25 °C Dynamic Input Characteristics V DS (V) I D = 20 A VDD = 5 V 10 V 25 V V GS 20 8 V GS (V) Gate to Source Voltage 50 20 40 16 Drain to Source Voltage 30 V DS 12 10 V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 0 4 2SK2735(L), 2SK2735(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C P ot uls e PDM PW T D= 0.03 1s h PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin .


2SK2735L 2SK2735S 2SK2736


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)