Part Number |
2SK2737 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2737 Datasheet (PDF) |
2SK2737
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-533B(Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK2737
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 45 180 45 30 150 –55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ±20 — — 1.0 — — 20 — — — — — — — — — Typ — — — — — 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max — — ±10 10 2.0 14 25 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt = 50A/µs Test Conditi.