Part Number |
2SK2738 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
N-CHANNEL MOS FET |
Datasheet |
2SK2738 Datasheet (PDF) |
2SK2738
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-483 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK2738
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)*
3 3 2 1
Ratings 60 ±20 40 160 40 40 137 30 150 –55 to +150
Unit V V A A A A mJ W °C °C
Body to drain diode reverse drain current I DR Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature I AP *
EAR*
Pch* Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2738
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltag.