Document
2SK2742
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2742
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.)
l High forward transfer admittance : |Yfs| = 3.5 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 100 V)
l Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(Note 2)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
100 100 ±20
3 12 2.5
140
3 0.25 150 −55~150
Unit V V V
A
W mJ A mJ °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to ambient
Rth (ch−a)
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 25 mH, RG = 25 Ω, IAR = 3 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-01-25
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS IDSS V (BR) DSS Vth
RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2 A VGS = 10 V, ID = 2 A VDS = 10 V, ID = 2 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2742
Min Typ. Max Unit
— — ±10
— — 100
100 —
—
0.8 — 2.0
— 0.35 0.45
— 0.28 0.35
1.5 3.5
—
— 280 —
— 50 —
— 105 —
µA µA V V Ω
S
pF
— 20 —
Switching time
Turn−on time Fall time
ton tf
— 50 — ns
— 40 —
Turn−off time
Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge
toff
Qg Qgs VDD ≈ 80 V, VGS = 10 V, ID = 3 A Qgd
— 170 —
— 13.5 —
— 8.5 — —5—
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition — —
IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / µs
Min Typ. Max Unit
—— 3 A
— — 12 A
—
— −1.5
V
— 110 —
ns
— 0.2 — µC
2 2002-01-25
2SK2742
3 2002-01-25
2SK2742
4 2002-01-25
2SK2742
RG = 25 Ω VDD = 25 V, L = 25 mH
EAS
=
1 2
× L × I2
× çæ è
BVDSS BVDSS - VDD
÷ö ø
5 2002-01-25
2SK2742
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of .