Part Number |
2SK2749 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2749 Datasheet (PDF) |
2SK2749
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2749
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 1.6 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
900
V
900
V
±30
V
7 A
21
150
W
682
mJ
7
A
15
mJ
150
°C
−55 to 150
°C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
We.