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Part Number 2SK2753-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-Channel MOSFET
Datasheet 2SK2753-01 Datasheet2SK2753-01 Datasheet (PDF)

  2SK2753-01   2SK2753-01
2SK2753-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 120V 32mΩ ±50A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-gate-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 120 120 ±50 ±200 ±30 150 150 -55 ~ +150 Unit V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Cap.



2SK2751 2SK2753-01 2SK2754-01L


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