DatasheetsPDF.com

2SK2777 Dataheets PDF



Part Number 2SK2777
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2777 Datasheet2SK2777 Datasheet (PDF)

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV) 2SK2777 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 k.

  2SK2777   2SK2777


Document
2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV) 2SK2777 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 65 345 6 6.5 150 −55~150 Unit V V V A A W Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC mJ A mJ °C °C ― ― 2-10S1B JEITA TOSHIBA Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 1.92 83.3 Unit °C / W °C / W JEDEC JEITA TOSHIBA ― ― 2-10S2B Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Weight: 1.5 g (typ.) 1 2006-11-08 www.DataSheet.in 2SK2777 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 6 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min — ±30 — 600 2.0 — 2.0 — — — — Typ. — — — — — 0.9 5.5 1300 130 400 25 Max ±10 — 100 — 4.0 1.25 — — — — — pF Unit μA V μA V V Ω S Turn−on time Switching time Fall time — 45 — ns — 40 — Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge — — — — 150 30 18 12 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR / dt = 100 A / μs Test Condition — — Min — — — — — Typ. — — — 1000 7 Max 6 24 −1.7 — — Unit A A V ns μC Marking K2777 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 www.DataSheet.in 2SK2777 3 2006-11-08 www.DataSheet.in 2SK2777 4 2006-11-08 www.DataSheet.in 2SK2777 RG = 25 Ω VDD = 90 V, L = 16.8 mH EAS = B VDSS 1 ⎛ ⎞ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 5 2006-11-08 www.DataSheet.in 2SK2777 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (co.


2SK2776 2SK2777 2SK2778


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)