Part Number |
2SK2777 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2777 Datasheet (PDF) |
2SK2777
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)
2SK2777
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z z z z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 65 345 6 6.5 150 −55~150 Unit V V V A A W
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC
mJ A mJ °C °C
― ― 2-10S1B
JEITA TOSHIBA
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of.