DatasheetsPDF.com



Part Number 2SK2782
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK2782 Datasheet2SK2782 Datasheet (PDF)

  2SK2782   2SK2782
www.DataSheet.co.kr 2SK2782 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV) 2 2SK2782 5.2 ± 0.2 1.7 ± 0.2 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.039 Ω (typ.) : |Yfs| = 11 S (typ.) 0.95 MAX. 0.6 ± 0.15 Unit: mm 6.8 MAX. 0.6 MAX : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 1.1 ± 0.2 12.0 MIN. 5.5 ± 0.2 0.6 MAX. Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 20 50 40 156 20 4 150 −55 to 150 Unit V V V A A W mJ A mJ 5.2 ± 0.2 1 1. 2. 2 3 2.5 MAX. 2 1 GATE DRAIN (HEAT SINK) 3. SOURSE 3 Pulse (Note 1) JEDEC JEITA TOSHIBA ― SC-64 2-7B5B Drain power dissipation (Tc = 25°.



2SK2779 2SK2782 2SK2788


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)