Part Number |
2SK2782 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2782 Datasheet (PDF) |
www.DataSheet.co.kr
2SK2782
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)
2
2SK2782
5.2 ± 0.2 1.7 ± 0.2
Chopper Regulator, DC-DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.039 Ω (typ.) : |Yfs| = 11 S (typ.)
0.95 MAX. 0.6 ± 0.15
Unit: mm
6.8 MAX. 0.6 MAX
: IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
2.3 2.3 1.1 ± 0.2
12.0 MIN.
5.5 ± 0.2
0.6 MAX.
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 60 60 ±20 20 50 40 156 20 4 150 −55 to 150
Unit V V V A A W mJ A mJ
5.2 ± 0.2
1
1. 2.
2
3
2.5 MAX.
2 1
GATE DRAIN (HEAT SINK) 3. SOURSE
3
Pulse (Note 1)
JEDEC JEITA TOSHIBA
― SC-64 2-7B5B
Drain power dissipation (Tc = 25°.