Part Number |
2SK2788 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2788 Datasheet (PDF) |
2SK2788
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-538 1st. Edition Features
• Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
UPAK
3
D
2
1
4
G
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2788
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)*
2 1
Ratings 60 ±20 2 4 2 1 150 –55 to +150
Unit V V A A A W °C °C
Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Pch* Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
2
2SK2788
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state res.