2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-534C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.12Ω typ. 4V gate drive devices. High speed switching
Outline
DPAK |1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
I...
