Part Number |
2SK2809 |
Manufacturers |
Fuji Electric |
Logo |
|
Description |
N-channel MOS-FET |
Datasheet |
2SK2809 Datasheet (PDF) |
2SK2809-01MR
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
0,01Ω
50A
50W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 50 200 ±20 453 50 150 -55 ~ +150
* L=0,241mH, VCC=24V
> Equivalent Circuit
Unit V A A V mJ* W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Re.