Part Number |
2SK2824 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2824 Datasheet (PDF) |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2824
For Portable Equipment High Speed Switch Applications Analog Switch Applications
• High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package
Marking
Equivalent Circuit
2SK2824
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
20 10 100 100 150 −55~150
Unit
V V mA mW °C °C
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the ap.