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2SK2825 Dataheets PDF



Part Number 2SK2825
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2825 Datasheet2SK2825 Datasheet (PDF)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package Marking Equivalent Circuit 2SK2825 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS .

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package Marking Equivalent Circuit 2SK2825 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 http://store.iiic.cc/ 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance 1 Drain-source ON resistance 2 Drain-source ON resistance 3 Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) 1 RDS (ON) 2 RDS (ON) 3 Ciss Crss Coss ton toff VGS = 10 V, VDS = 0 ID = 100 μA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 1.5 V, ID = 0.1 mA VDS = 1.5 V, ID = 10 mA ID = 1 mA, VGS = 1.2 V ID = 10 mA, VGS = 1.5 V ID = 10 mA, VGS = 2.5 V VDS = 1.5 V, VGS = 0, f = 1 MHz VDS = 1.5 V, VGS = 0, f = 1 MHz VDS = 1.5 V, VGS = 0, f = 1 MHz VDD = 1.5 V, ID = 10 mA, VGS = 0~1.5 V Switching Time Test Circuit (1) Test circuit (2) VIN VGS 2SK2825 Min Typ. Max Unit ⎯ ⎯ 1 μA 20 ⎯ ⎯ V ⎯ ⎯ 1 μA 0.5 ⎯ 1.0 V 35 70 ⎯ mS ⎯ 15 50 Ω ⎯ 10 40 Ω ⎯ 7 28 Ω ⎯ 12 ⎯ pF ⎯ 3.4 ⎯ pF ⎯ 12 ⎯ pF ⎯ 0.35 ⎯ ⎯ 0.2 ⎯ μs (3) VOUT VDS 2 http://store.iiic.cc/ 2007-11-01 2SK2825 3 http://store.iiic.cc/ 2007-11-01 2SK2825 4 http://store.iiic.cc/ 2007-11-01 2SK2825 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause.


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