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Part Number 2SK2825
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2825 Datasheet2SK2825 Datasheet (PDF)

  2SK2825   2SK2825
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package Marking Equivalent Circuit 2SK2825 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropr.



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